Q41GATE 2003MCQ

The action of JFET in its equivalent circuit can best be represented as a

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Q42GATE 2002MCQ

The voltage gain $A\Delta =\frac{V_{o}}{V_{i}}$ of the JFET amplifier shown in figure 2.8 is

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📖 Explanation

\begin{aligned} g_{m} &=\frac{2 I_{D S S}}{\left|V_{P}\right|}\left(1-\frac{V_{G S}}{V_{P}}\right) \\ V_{G} &=0, V_{S}=I_{D} \cdot R_{S}=1 \mathrm{mA} \times 2.5 \\ V_{s} &=2.5 \mathrm{V} \\ V_{G S} &=V_{G}-V_{S}=-2.5 \mathrm{V} \\ g_{m} &=\frac{2 \times 10 \mathrm{mA}}{5}\left(1-\left(\frac{-2.5}{-5}\right)\right)=2 \mathrm{mS} \\ A_{v} &=-g_{m} R_{D} \\ &\quad \left(\because r_{d} \text { is not given, it is taken as } \infty \right) \\ &=-2 m S \times 3 k \Omega=-6 \end{aligned}

Q43GATE 2002MCQ

Consider the following statements in connection with the CMOS inverter in figure, where both the MOSFETs are of enhancement type and both have a thresh old voltage of 2V. Statement 1: T1 conducts when $V_{i}\geq$ 2V. Statement 2: T1 is always in saturation when $V_{0}=$ 0V.

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📖 Explanation

Statement-2 is false because $V_{DS}$ will be less than $V_{GS}- V_{T}, \text{if }V_{o}= 0.$