To determine the Boolean expression for the output F, let's analyze the circuit in two stages.
First, examine the left multiplexer. With X as the select line, the output (let's call it F1) is Y when X=0 and 0 when X=1. This can be written as the expression F1=XˉY.
Next, this signal F1 is an input to the second multiplexer. This MUX has Z as its select line. Its output F is F1 when Z=0, and the inverse of F1 (due to the NOT gate) when Z=1. This gives us F=ZˉF1+ZF1ˉ.
Now, substitute the expression for F1 into this equation: F=Zˉ(XˉY)+Z(XˉY).
Applying De Morgan's theorem to the inverted term gives XˉY=X+Yˉ.
Plugging this back in, we get F=XˉYZˉ+(X+Yˉ)Z. Distributing the Z term yields the final expression: F=XˉYZˉ+XZ+YˉZ.
Q2GATE 2017MCQ1MSignals and Systems
An LTI system with unit sample response h[n]= 5δ[n]−7δ[n−1]+7δ[n−3]−5δ[n−4] is a
To understand the filter's behavior, we analyze its frequency response, H(ejω), which is the DTFT of the impulse response h[n].
The frequency response is H(ejω)=5−7e−jω+7e−j3ω−5e−j4ω.
Let's test the response at the extreme ends of the frequency spectrum.
At the lowest frequency, ω=0 (DC): H(ej0)=5−7(1)+7(1)−5(1)=0.
At the highest frequency, ω=π: H(ejπ)=5−7e−jπ+7e−j3π−5e−j4π=5−7(−1)+7(−1)−5(1)=5+7−7−5=0.
Since the filter's gain is zero at both the lowest and highest frequencies, it must be attenuating these extremes while passing a band of frequencies in the middle. This is the characteristic behavior of a band-pass filter.
Q3GATE 2017NAT1MNetwork Theory
In the circuit shown, V is a sinusoidal voltage source. The current I is in phase with voltage V. The ratio amplitudeofvoltageacrosstheresistoramplitudeofvoltageacrossthecapacitor is
The problem states that the source voltage V and the circuit current I are in phase. This is the defining condition for resonance in a series RLC circuit, meaning the net reactance is zero.
The ratio we need to find, the voltage amplitude across the capacitor (VC) to the voltage amplitude across the resistor (VR), is equal to the circuit's quality factor, Q.
The quality factor is calculated using the formula Q=R1CL.
Substituting the given component values, R=5Ω, L=5H, and C=5F:
DRAM, which stands for Dynamic Random Access Memory, stores each bit of information in a memory cell consisting of a tiny capacitor and a transistor. The presence or absence of an electrical charge on the capacitor determines whether the cell is storing a logical '1' or a '0'. This charge-based storage method is the fundamental principle of how DRAM operates. Because the charge on the capacitor can leak away over time, it must be periodically refreshed, which is why this type of memory is called "dynamic."
Q5GATE 2017NAT1MElectronic Devices
Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox . If gate-to-source voltage VGS =0.7V, drain-tosource voltage VDS=0.1V,(μnCox)=100μA/V2 ,threshold voltage VTH=0.3V and (W/L)=50,then the transconductance gm (in mA/V) is ___________.
First, we need to identify the MOSFET's region of operation. The overdrive voltage is VGS−VTH=0.7V−0.3V=0.4V. Since this overdrive voltage is greater than the drain-to-source voltage, VDS=0.1V, the MOSFET is operating in the linear (triode) region.
In the linear region, the drain current ID is given by the equation: ID=μnCoxLW[(VGS−VTH)VDS−2VDS2]
Transconductance, gm, is found by taking the partial derivative of ID with respect to VGS: gm=∂VGS∂ID=μnCoxLWVDS
Now, we can substitute the given values into this expression for gm: gm=(100μA/V2)×(50)×(0.1V) gm=500μA/V=0.5 mA/V
Q6GATE 2017MCQ1MElectromagnetics
Two conducting spheres S1 and S2 of radii a and b (b>a) respectively, are placed far apart and connected by a long, thin conducting wire, as shown in the figure. For some charge placed on this structure, the potential and surface electric field on S1 are Va and Ea , and that on S2 are Vb and Eb , respectively, which of the following is CORRECT?
Because the two spheres are connected by a conducting wire, they form a single system that must be at a uniform potential once electrostatic equilibrium is reached. Therefore, the potential on sphere S1 must equal the potential on sphere S2, so Va=Vb.
Using the formula for potential on a sphere, V=4πϵ0RQ, the equality Va=Vb implies aQa=bQb. Now, let's compare the electric fields using the formula E=4πϵ0R2Q. The ratio of the fields is EbEa=Qb/b2Qa/a2=QbQa⋅a2b2. Substituting QbQa=ba from our potential analysis, we get EbEa=ba⋅a2b2=ab. Since we are given that b>a, the ratio ab is greater than 1, which means Ea>Eb.
Q7GATE 2017MCQ1MDigital Circuits
For the circuit shown in the figure, P and Q are the inputs and Y is the output. The logic implemented by the circuit is
Let's analyze the circuit's operation based on the input P. When P=0, the top PMOS transistor turns on, connecting the output Y to the input Q. When P=1, the bottom NMOS transistor turns on, connecting Y to the inverted input Qˉ.
Combining these conditions yields the Boolean expression Y=PˉQ+PQˉ. This is the definition of the Exclusive OR (XOR) function.
However, this pass-transistor logic design has a known flaw. An NMOS transistor passes a "weak" logic 1 (a degraded voltage), and a PMOS passes a "weak" logic 0. Because the circuit produces degraded output levels for some input combinations, it is a poor implementation. This ambiguity regarding its practical performance is the likely reason the question was invalidated in its original context.
Q8GATE 2017MCQ1MAnalog Circuits
An n-channel enhancement mode MOSFET is biased at VGS>VTHandVDS>(VGS−VTH) , where VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a
The bias conditions VGS>VTH and VDS>(VGS−VTH) place the MOSFET in the saturation region of operation. In this mode, the device primarily acts as a current source, where the drain current is controlled by the gate-to-source voltage, VGS.
If channel length modulation were ignored, the output impedance would be infinite. However, the problem states this effect is significant. Channel length modulation causes the drain current to have a slight dependence on the drain-to-source voltage, VDS. This small change in current for a change in voltage is precisely what defines a finite output impedance (ro). Therefore, the MOSFET behaves as a current source with a finite output impedance.
Q9GATE 2017NAT1MNetwork Theory
A connection is made consisting of resistance A in series with a parallel combination of resistances B and C. Three resistors of value 10 Ω , 5 Ω , 2 Ω are provided. Consider all possible permutations of the given resistors into the positions A, B, C, and identify the configurations with maximum possible overall resistance, and also the ones with minimum possible overall resistance. The ratio of maximum to minimum values of the resistances (up to second decimal place) is ____________.
The total resistance of the circuit is given by the formula Rtotal=RA+RB+RCRBRC.
To maximize the total resistance, we should select the largest resistor for the series component, RA, as it adds its full value. Thus, for the maximum configuration, RA=10Ω, and Rmax=10+5+25×2=780Ω.
Conversely, to minimize the total resistance, we should choose the smallest resistor for the series part. Setting RA=2Ω gives the minimum configuration: Rmin=2+10+510×5=316Ω.
Finally, the ratio of the maximum to minimum resistance is RminRmax=16/380/7=715≈2.143.
Q10GATE 2017MCQ1MElectronic Devices
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base - collector junction is increased, then
In the active region, the collector-base junction is reverse-biased. Increasing this reverse bias voltage widens the depletion region, which extends into the base and reduces its effective width. This phenomenon is called the Early effect or base-width modulation.
A narrower base means that electrons injected from the emitter travel a shorter distance to reach the collector. This reduces the probability that they will recombine with holes in the base. Since base current (IB) is largely due to this recombination, a smaller recombination rate leads to a smaller IB for a given collector current (IC). As a result, the common-emitter current gain, β=IC/IB, increases.
Let's analyze the system by examining each state equation individually from the given matrix form.
The first state equation is x˙1(t)=0. Since the initial condition is x1(0)=0, the state x1(t) will remain at 0 for all time.
This simplifies the expression we need to evaluate: limt→∞∣x12(t)+x22(t)∣=limt→∞∣0+x22(t)∣=∣limt→∞x2(t)∣. We only need to find the steady-state value of x2(t).
The second state equation is x˙2(t)=−9x2(t)+45u(t). Taking the Laplace transform with x2(0)=0 yields sX2(s)=−9X2(s)+s45, which gives X2(s)=s(s+9)45.
Using the Final Value Theorem to find the steady-state value: limt→∞x2(t)=lims→0sX2(s)=lims→0s(s(s+9)45)=945=5.
Therefore, the final value of the expression is ∣5∣=5.
The rank of a matrix is its number of linearly independent rows. We can find this by using row operations to convert the matrix into row echelon form and then counting the non-zero rows.
A key observation here is that the sum of the first four rows (R1+R2+R3+R4) equals the negative of the fifth row (−R5). This means R1+R2+R3+R4+R5=0, proving the rows are linearly dependent and the rank must be less than 5.
Let's formally demonstrate this. We can combine the first four rows into the fourth row through a series of operations (R4→R4+R1, then R4→R4+R3, then R4→R4+R2). This yields: 10000−1010001−1000−10−110001−1
Now, adding the new fourth row to the fifth (R5→R5+R4) creates a zero row. To finalize the echelon form, we swap the second and third rows (R2↔R3): 10000−110000−110000−1−1000010
The resulting matrix has four non-zero rows, so the rank is 4.
Q13GATE 2017NAT1MElectromagnetics
A two - wire transmission line terminates in a television set. The VSWR measured on the line is 5.8. The percentage of power that is reflected from the television set is ______________
The Voltage Standing Wave Ratio (VSWR) quantifies the mismatch between the transmission line and the load. We can use it to find the magnitude of the reflection coefficient, ∣Γ∣, which represents the fraction of the incident wave that is reflected. The governing formula is:
∣Γ∣=VSWR+1VSWR−1
Substituting the given VSWR of 5.8, we get:
∣Γ∣=5.8+15.8−1=6.84.8≈0.7059
The fraction of power reflected is the square of the reflection coefficient's magnitude, ∣Γ∣2. To express this as a percentage:
Percentage of Reflected Power=∣Γ∣2×100=(0.7059)2×100≈49.83%
Q14GATE 2017MCQ1MSignals and Systems
The input x(t) and the output y(t) of a continuous-time system are related as y(t)=∫t−Ttx(u)du . The system is
This system describes a moving average, calculating the integral of the input signal over a sliding window of fixed duration T. The system is linear because the integral operator itself is linear, satisfying the principles of superposition and homogeneity.
To test for time-invariance, we compare two scenarios. First, a time-shifted output is y(t−t0)=∫t−t0−Tt−t0x(u)du. Second, the output for a time-shifted input x(t−t0) is ∫t−Ttx(u−t0)du. By substituting a new variable τ=u−t0, this second integral becomes ∫t−t0−Tt−t0x(τ)dτ. This result is identical to the shifted output y(t−t0). Since a shift in the input produces an identical shift in the output, the system is time-invariant.
The primary purpose of a lag compensator is to improve steady-state error, not to fundamentally alter a system's stability. It achieves this by adding a pole-zero pair very close to the origin in the s-plane. This action increases the system's gain at low frequencies but has a minimal, and sometimes detrimental, effect on the phase margin. Since its effect on the root locus is to slightly shift it to the right, it cannot be relied upon to stabilize an unstable system and can even push a marginally stable system into instability. Stabilization is the primary role of a lead compensator.
Residue at, z=4 is =limx→1(z−4)(z−4)(z+1)31=(4+1)31=1251 Residue at z=-1 is =limz→−12!1dz2d2((z−1)3(z−4)(z+1)31)=limz→−12!1((z−4)32)=(−1−4)31=125−1
Q17GATE 2017NAT1MCommunication Systems
A sinusoidal message signal is converted to a PCM signal using a uniform quantizer. The required signal-to-quantization noise ratio (SQNR) at the output of the quantizer is 40dB. The minimum number of bits per sample needed to achieve the desired SQNR is _______
m2+2m−5m Solution is y=0=2−2±4+20=2−2±24=2−2±26=−1±6=K1e(−1+6)x+K2e(−1−6)x
Q19GATE 2017MCQ1MCommunication Systems
Which one of the following graphs shows the Shannon capacity (channel capacity) in bits of a memory less binary symmetric channel with crossover probability P?
The Shannon capacity C of a memoryless binary symmetric channel is defined by the crossover probability p. The formula is C(p)=1−H(p), where H(p) is the binary entropy function, which can be written out as C(p)=1+plog2(p)+(1−p)log2(1−p).
Let's test some key values of p. When the channel is perfect (p=0) or perfectly predictable (p=1), the capacity is maximal, C=1. When the channel is most noisy and random (p=0.5), the capacity is minimal, C=0. The logarithmic terms mean the graph is a smooth curve, not linear. This describes a convex, U-shaped curve that is symmetric about p=0.5.
Q20GATE 2017NAT1MAnalog Circuits
The output V0 of the diode circuit shown in the figure is connected to an averaging DC voltmeter. The reading on the DC voltmeter in Volts, neglecting the voltage drop across the diode, is ____________.
This circuit is a classic half-wave rectifier. Since we're told to neglect the diode's voltage drop, it acts as a perfect switch, passing the positive half-cycles of the input sine wave to the output and blocking the negative ones.
An averaging DC voltmeter measures the average DC value of the signal it's connected to. For a half-wave rectified sine wave, the average value is given by the formula Vavg=πVm, where Vm is the peak amplitude of the wave.
The input voltage is specified as 10sinωt, so its peak value Vm is 10 V. Therefore, the reading on the DC voltmeter will be: Vreading=π10≈3.183 V
Q21GATE 2017NAT1MCommunication Systems
Consider the random process X(t)=U+Vt, where U is a zero-mean Gaussian random variable and V is a random variable uniformly distributed between 0 and 2. Assume that U and V are statistically independent. The mean value of the random process at t = 2 is ____________
To determine the system's transfer function, we start by writing an algebraic expression for the output signal, Y(s). By tracing the signals through the block diagram, we can see how Y(s) is constructed.
The output Y(s) is the sum of two signals at the rightmost summing junction:
The signal from the gain block, which is G(s)[X(s)−Y(s)].
A direct feedforward signal from the input, which is X(s).
Combining these gives the equation: Y(s)=G(s)[X(s)−Y(s)]+X(s).
Our goal is to find the ratio Y(s)/X(s), so we rearrange the terms by grouping Y(s) on the left and X(s) on the right: Y(s)+G(s)Y(s)=G(s)X(s)+X(s)
Factoring out Y(s) and X(s) gives: Y(s)[1+G(s)]=X(s)[G(s)+1].
Finally, solving for the transfer function X(s)Y(s) shows that the terms cancel, resulting in a value of 1.
Q23GATE 2017NAT1MEngineering Mathematics
The smaller angle (in degrees) between the planes x + y + z =1 and 2x - y + 2z = 0 is ________.
a1x+b1y+c1z+d1=0a2x+b2y+c2z+d2=0 then cosθ=a12+b12+c12a22+b22+c22a1a2+b4b2+c1c2a1=1b1=1c1=1d1=−1a2=2b2=−1c2=2d2=0cosθ=(1)2+(1)2+(1)2(2)2+(−1)2+(2)2(1)(2)+(1)(−1)+(1)(2)=392−1+2=333=31θ=cos−1(31)=54.73∘
Q24GATE 2017NAT1MAnalog Circuits
Consider the circuit shown in the figure. Assume base-to- emitter voltage VBE =0.8 V and common base current gain (α) of the transistor is unity. The value of the collector- to - emitter voltage VCE (in volt) is _______.
To analyze this circuit, we first simplify the base voltage divider network by finding its Thevenin equivalent voltage, VTh. This voltage is VTh=16 kΩ+44 kΩ16 kΩ×18 V=4.8 V.
Since the common base current gain α=1, it implies an infinite common emitter gain (β), making the base current IB effectively zero. This also means the collector current IC is equal to the emitter current IE.
Applying KVL around the base-emitter loop, we get VTh=VBE+IERE. We can now find the emitter current: IE=REVTh−VBE=2 kΩ4.8 V−0.8 V=2 mA.
Since IC=IE=2 mA, we find the collector-to-emitter voltage, VCE, by applying KVL on the output loop: VCE=VCC−ICRC−IERE=18 V−(2 mA×4 kΩ)−(2 mA×2 kΩ)=18−8−4=6 V.
Q25GATE 2017MCQ1MAnalog Circuits
In the figure, D1 is a real silicon pn junction diode with a drop of 0.7V under forward bias condition and D2 is a zener diode with breakdown voltage of -6.8 V. The input [latex ]V_{in}(t)[/latex] is a periodic square wave of period T, whose one period is shown in the figure. Assuming 10 τ<<T , where τ is the time constant of the circuit, the maximum and minimum values of the output waveform are respectively,
This circuit is a biased clamper. The capacitor charges to its steady-state voltage during the positive input swing when both diodes conduct. This occurs when the silicon diode D1 is forward-biased (0.7V) and the Zener diode D2 is in breakdown (6.8V), clamping the output at their combined voltage. The maximum output voltage is therefore Vout,max=0.7V+6.8V=7.5V.
At the moment of clamping, when the input is at its peak (V∈=+14V), we can determine the capacitor's steady-state voltage, VC, using KVL: V∈,max=VC+Vout,max. This gives VC=14V−7.5V=6.5V.
During the negative input swing (V∈=−14V), the diodes are reverse-biased and act like an open circuit. The output voltage is then given by Vout(t)=V∈(t)−VC. The minimum output voltage is thus Vout,min=V∈,min−VC=−14V−6.5V=−20.5V.
Q26GATE 2017MCQ2MEngineering Mathematics
If the vector function Fˉ=ax^(3y−k1z)+ay^(k2x−2z)−az^(k3x+z) is irrotational, then the values of the constants k1,k2 and k3 respectively, are
The un-modulated carrier power in an AM transmitter is 5kW. This carrier is modulated by a sinusoidal modulating signal. The maximum percentage of modulation is 50%. If it is reduced to 40%, then the maximum un-modulated carrier power (in kW) that can be used without overloading the transmitter is ___________
Given that, PC So, Pt(max) For μ=5kW for μ(max)=0.5=Pc[1+2(0.5)2]$=5[1+20.25]kW=5.625kW=0.4,PQrex )(1+2μ2)=PC(rax)=Pt(max)1+2(0.4)25.625kW=5.208kW
Q28GATE 2017NAT2MSignals and Systems
Consider an LTI system with magnitude response
∣H(f)∣={1−20∣f∣0∣f∣≤20∣f∣>20
And phase response Arg {H(f)}=-2f If the input to the system is x(t)=8cos(20πt+4π)+16sin(40πt+8π)+24cos(80πt+16π) Then the average power of the output signal y(t) is _________.
The input signal x(t) is a sum of three sinusoids with frequencies f1=10 Hz, f2=20 Hz, and f3=40 Hz. We must examine how the LTI system's filter affects each component.
The filter's magnitude response ∣H(f)∣ is zero for all frequencies ∣f∣≥20 Hz. Therefore, the input components at 20 Hz and 40 Hz are completely attenuated, and only the 10 Hz component passes through.
At f=10 Hz, the filter's gain is ∣H(10)∣=1−20∣10∣=0.5.
The original amplitude of the 10 Hz component is 8. The output amplitude is this original amplitude scaled by the filter's gain: Aout=8×∣H(10)∣=8×0.5=4.
The output signal y(t) is thus a single sinusoid with an amplitude of 4. The average power of this signal is given by Py=2Aout2=242=8 W.
Q29GATE 2017NAT2MElectronic Devices
A MOS capacitor is fabricated on p-type Si (silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV. EC−FF =0.9 eV, where EC and EF are the conduction band minimum and the Fermi energy levels of Si, respectively. Oxide ∈r=3.9,∈o=8.85×10−14 F/cm, oxide thickness tox=0.1μm and electronic charge q=1.6×10−19C . If the measured flat band voltage of the capacitor is -1V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in nC/cm2 , is __________.
An electron ( q1 ) is moving in free space with velocity 105 m/s towards a stationary electron ( q2 ) far away. The closest distance that this moving electron gets to the stationary electron before the repulsive force diverts its path is ___________ ×10−8 m. [Given, mass of electron m=9.11×10−31 kg, charge of electron e=−1.6×10−19 C, and permittivity ε0=(1/36π)×10−9F/m]
r is the distance at which kinetic energy of q1 becomes zero [(because kinetic energy (KE) is converted into potential energy (PE)]. When q1 reaches 'r', it starts diverting. Kinetic energy, KE=21mv2 and work done in moving q1 charge to distance 'r' is
For the first integral, I1=∫01(∫01(x+y)3x−ydy)dx, we begin with the inner integral over y. By rewriting the integrand as (x+y)32x−(x+y)=(x+y)32x−(x+y)21, we can integrate with respect to y to get (x+y)2−x+x+y1. Evaluating this from y=0 to y=1 yields (x+1)21. The outer integral is then ∫01(x+1)2dx=[−x+11]01=−21−(−1)=0.5.
For the second integral, I2=∫01(∫01(x+y)3x−ydx)dy, we integrate over x first. This time, we rewrite the integrand as (x+y)3(x+y)−2y=(x+y)21−(x+y)32y. Integrating with respect to x gives −x+y1+(x+y)2y. Evaluating this from x=0 to x=1 results in (1+y)2−1. The final outer integral is ∫01(1+y)2−1dy=[1+y1]01=21−1=−0.5.
Thus, the values of the two integrals are 0.5 and -0.5, respectively.
Q32GATE 2017NAT2MEngineering Mathematics
Passengers try repeatedly to get a seat reservation in any train running between two stations until they are successful. If there is 40% chance of getting reservation in any attempt by a passenger, then the average number of attempts that passengers need to make to get a seat reserved is _________.
This problem describes a sequence of repeated, independent trials until a success is achieved, which is a classic example of a geometric distribution. Let the probability of success (getting a reservation) be p=0.4, and the probability of failure be q=1−p=0.6.
We want to find the average, or expected number of attempts, E[X]. This is the sum of each possible number of attempts multiplied by its probability: E[X]=1(p)+2(qp)+3(q2p)+…
To find the value of this infinite series, we can use a helpful algebraic trick. Let's subtract qE[X] from E[X]: E[X]−qE[X]=(p+2qp+3q2p+…)−(qp+2q2p+…)=p+qp+q2p+…
The left side simplifies to (1−q)E[X]=pE[X]. The right side is a geometric series that sums to 1−qp=pp=1.
Therefore, we get the simple relation pE[X]=1, which means E[X]=p1.
Plugging in the given probability, the average number of attempts is 0.41=2.5.
Q33GATE 2017NAT2MDigital Circuits
Figure I shows a 4-bits ripple carry adder realized using full adders and Figure II shows the circuit of a full-adder (FA). The propagation delay of the XOR, AND and OR gates in Figure II are 20 ns, 15 ns and 10 ns respectively. Assume all the inputs to the 4-bit adder are initially reset to At t=0, the inputs to the 4-bit adder are changed to X3X2X1X0=1100,Y3Y2Y1Y0=0100andZ0=1 . The output of the ripple carry adder will be stable at t (in ns) = ___________
To determine when the ripple-carry adder's output becomes stable, we must find the longest delay path for the given inputs. The critical path is typically the carry propagation chain.
First, let's analyze the delay for the carry-out, Zn+1, of a single full adder. A carry is generated (Zn+1=1 regardless of Zn) when Xn=1 and Yn=1. This path involves an AND gate and an OR gate, taking 15 ns+10 ns=25 ns. A carry is propagated (Zn+1=Zn) when Xn⊕Yn=1. This path involves an XOR, AND, and OR gate.
Now, we trace the carry signal stage by stage:
Stages 0 & 1: For n=0 and n=1, the inputs are XnYn=00. These stages don't generate or propagate a carry, so Z1 and Z2 remain 0. Their values are stable instantly at t=0.
Stage 2: With inputs X2=1,Y2=1, this stage generates a carry. The carry-out Z3 becomes stable after the 25 ns delay for carry generation. Thus, Z3 is ready at t=25 ns.
Stage 3: This stage has inputs X3=1,Y3=0, which means it propagates its incoming carry. The final carry Z4 will be stable after Z3 propagates through this stage. The arrival time of Z3 is 25 ns. The path through this stage involves an XOR, an AND, and an OR. The total time for Z4 is max(tXOR,tZ3 arrival)+tAND+tOR=max(20 ns,25 ns)+15 ns+10 ns=25+15+10=50 ns.
The last sum bit, S3, stabilizes at 45 ns. Since Z4 is the last output to settle, the entire adder is stable at 50 ns.
Q34GATE 2017NAT2MElectromagnetics
The permittivity of water at optical frequencies is 1.75 ε0 . It is found that an isotropic light source at a distance d under water forms an illuminated circular area of radius 5m, as shown in the figure. The critical angle is θc . The value of d (in meter) is _____________
The illuminated circular area on the surface is limited by total internal reflection. Its radius is determined by light rays from the source that strike the water-air interface at the critical angle, θc. We can find this angle using the given permittivities of water (ϵ1=1.75ε0) and air (ϵ2=ε0).
The relationship is sinθc=ϵ2/ϵ1=ε0/(1.75ε0), which gives θc=sin−1(1/1.75)≈49.1∘.
From the right-angled triangle shown in the figure, we can see that the depth d and the radius (5 m) are related by the tangent of the critical angle. tanθc=dradius=d5
Solving for the depth d, we find: d=tan(49.1∘)5≈1.15475≈4.33 m
Q35GATE 2017MCQ2MControl Systems
A unity feedback control system is characterized by the open-loop transfer function G(s)=s3+3s2+1010K(s+2) The Nyquist path and the corresponding Nyquist plot of G(s) are shown in the figures below. If 0<K<1 , then the number of poles of the closed-loop transfer function that lie in the right half of the s-plane is
To determine the number of unstable closed-loop poles, we use the Nyquist stability criterion, N=P−Z. In this formula, Z is the number of closed-loop poles in the right-half s-plane (RHP), P is the number of open-loop poles in the RHP, and N is the number of times the Nyquist plot encircles the critical point (−1,0).
First, we find P by checking the stability of the open-loop transfer function, G(s). The poles of G(s) are the roots of the denominator, s3+3s2+10=0. Applying the Routh-Hurwitz criterion, the first column of the Routh array has the values [1, 3, -10/3, 10]. There are two sign changes, which means there are two open-loop poles in the RHP. Therefore, P=2.
Next, we determine N from the provided Nyquist plot. The plot shows an intersection with the negative real axis at −K. Since the problem states 0<K<1, the critical point (−1,0) is to the left of this intersection and is not enclosed by the plot. Thus, the number of encirclements is N=0.
Finally, we substitute our values into the Nyquist criterion: N=P−Z becomes 0=2−Z. Solving for Z, we find Z=2. This means there are two unstable poles in the closed-loop system.
Q36GATE 2017MCQ2MSignals and Systems
The signal x(t)=sin(14000πt) , where t is in seconds is sampled at a rate of 9000 samples per second. The sampled signal is the input to an ideal low pass filter with frequency response H(f) as follows :
H(f)={1,0,∣f∣≤12kHz∣f∣≥12kHz
What is the number of sinusoids in the output and their frequencies in kHz?
The input signal is x(t)=sin(14000πt). We can find its frequency, fm, from the standard form sin(2πfmt), which gives 2πfm=14000π, so fm=7 kHz.
Sampling this signal at fs=9 kHz creates spectral replicas centered at integer multiples of the sampling frequency. The frequencies of these components in the sampled signal's spectrum are given by ∣fm±nfs∣ for integers n=0,1,2,....
Let's calculate the first few of these frequencies:
For n=0, we get the original frequency: 7 kHz.
For n=1, we get aliased frequencies: ∣7−9∣=2 kHz and 7+9=16 kHz.
For n=2, we get another aliased frequency: ∣7−2×9∣=∣7−18∣=11 kHz.
The ideal low-pass filter passes all frequencies ∣f∣≤12 kHz. From the components we calculated {2, 7, 11, 16, ...} kHz, only 2 kHz, 7 kHz, and 11 kHz fall within the filter's passband. Therefore, the output consists of three sinusoids at these frequencies.
Q37GATE 2017NAT2MControl Systems
A unity feedback control system is characterized by the open-loop transfer function G(s)=s3+ks2+2s+12(s+1) The value of k for which the system oscillates at 2 rad/s is ________.
First, we need to find the characteristic equation of the closed-loop system. For a unity feedback system, the closed-loop transfer function is T(s)=1+G(s)G(s). The denominator of T(s) set to zero gives us the characteristic equation. 1+G(s)=1+s3+ks2+2s+12(s+1)=s3+ks2+2s+1s3+ks2+4s+3=0
So, the characteristic equation is s3+ks2+4s+3=0.
A system oscillates when it is marginally stable, which means it has poles on the imaginary axis. We can use the Routh-Hurwitz stability criterion to find the value of k that causes this. For a third-order system of the form as3+bs2+cs+d=0, the system is marginally stable when the product of the inner coefficients equals the product of the outer coefficients, i.e., bc=ad.
Applying this condition to our equation (1s3+ks2+4s+3=0), we get: k⋅4=1⋅3 4k=3⟹k=0.75
Q38GATE 2017NAT2MNetwork Theory
Consider the circuit shown in the figure. The Thevenin equivalent resistance (in Ω ) across P - Q is _________.
To find the Thevenin resistance (RTh), we first deactivate the independent 10V source by replacing it with a short circuit. We then apply a test source across terminals P-Q to determine the equivalent resistance. The circuit analysis yields two key relationships involving the controlling current i0 and a voltage Vx.
From Kirchhoff's Voltage Law (KVL), we find Vx=2i0+1. From Ohm's law, we also have Vx=i0.
Equating these two expressions gives 2i0+1=i0, which solves to i0=−1 A. Substituting this value back, we find the voltage to be Vx=−1 V. Assuming a 1 A test current was used to generate this voltage, the Thevenin resistance is calculated as: RTh=ItestVx=1 A−1 V=−1Ω.
Q39GATE 2017NAT2MSignals and Systems
The transfer function of a causal LTI system is H(s) = 1/s. If the input to the system is x(t)=[sin(t)/πt]u(t) , where u(t) is a unit step function, the system output y(t) as t→∞ is______.
The system's transfer function, H(s)=1/s, corresponds to a pure integrator in the time domain. This means the output y(t) is simply the integral of the input signal x(t). We are asked to find the steady-state value of the output, which is the value of this integral as t→∞.
limt→∞y(t)=∫0∞x(τ)dτ=∫0∞πτsin(τ)dτ
We can factor out the constant 1/π. The remaining integral is the famous Dirichlet integral, whose value is a standard result.
limt→∞y(t)=π1∫0∞τsin(τ)dτ=π1(2π)=21=0.5
Q40GATE 2017MCQ2MEngineering Mathematics
An integral I over a counter clock wise circle C is given by I=∮0cz2+1z2−1ezdz . If C is defined as |z| = 3, then the value of I is
This integral can be evaluated using Cauchy's Residue Theorem. The function f(z)=z2+1z2−1ez has simple poles where the denominator z2+1=0, which occurs at z=i and z=−i. Since the contour is a circle of radius 3 centered at the origin, both poles lie inside it.
We first compute the residue at each pole.
Residue at z=i: Res(f,i)=limz→i(z−i)f(z)=limz→iz+iz2−1ez=2ii2−1ei=2i−2ei=iei.
Residue at z=−i: Res(f,−i)=limz→−i(z+i)f(z)=limz→−iz−iz2−1ez=−2i(−i)2−1e−i=−2i−2e−i=−ie−i.
The integral is 2πi times the sum of the enclosed residues: I=2πi(iei−ie−i)=2πi2(ei−e−i)=−2π(ei−e−i).
Using the identity eiθ−e−iθ=2isin(θ), this simplifies to I=−2π(2isin(1))=−4πisin(1).
Q41GATE 2017MCQ2MCommunication Systems
Consider a binary memory less channel characterized by the transition probability diagram shown in the figure. The channel is
The channel's behavior is described by the transition probability matrix
P(Y∣X)=[0.250.250.750.75]
. A crucial observation is that both rows of this matrix are identical. This means the probability of receiving a 0 or 1 is completely independent of the input bit that was sent. For any arbitrary input distribution, the output distribution is fixed at [0.25,0.75].
Because the output is statistically independent of the input, observing the output provides no information whatsoever about the input. This means the mutual information between input and output, I(X;Y), is always zero. A channel with zero capacity that cannot transfer any information is defined as useless.
Q42GATE 2017MCQ2MElectronic Devices
An abrupt pn junction (located at x = 0) is uniformly doped on both p and n sides. The width of the depletion region is W and the electric field variation in the x-direction is E(x). Which of the following figures represents the electric field profile near the pn junction?
A second - order LTI system is described by the following state equations, dtdx1(t)−x2(t)=0dtdx2(t)+2x1(t)+3x2(t)=r(t) Where x1(t) and x2(t) are the two state variables and r(t) denotes the input. The output c(t)=x1(t) . The system is.
To determine the system's behavior, we'll derive its transfer function from the state-space model. First, apply the Laplace transform to the given equations, which gives us sX1(s)=X2(s) and sX2(s)+2X1(s)+3X2(s)=R(s). We can substitute the first equation into the second to eliminate X2(s) and create a single equation relating the input R(s) to the output X1(s). This substitution yields s(sX1(s))+2X1(s)+3(sX1(s))=R(s).
Rearranging this expression gives us the system's transfer function: R(s)X1(s)=s2+3s+21. The denominator, s2+3s+2, is the characteristic equation. By comparing it to the standard second-order form s2+2ζωns+ωn2, we can identify that ωn2=2 and 2ζωn=3. Solving for the damping ratio ζ gives ζ=2ωn3=223≈1.06. Since ζ>1, the system is overdamped.
Q44GATE 2017NAT2MSignals and Systems
Consider the parallel combination of two LTI systems shown in the figure. The impulse responses of the systems are h1(t)=2δ(t+2)−3δ(t+1)h2(t)=δ(t−2) If the input x(t) is a unit step signal, then the energy of y(t) is ____________.
For systems in parallel, the overall impulse response is the sum of the individual responses.
Therefore, h(t)=h1(t)+h2(t)=2δ(t+2)−3δ(t+1)+δ(t−2).
The output y(t) is the convolution of the input x(t)=u(t) with the overall impulse response h(t). Using the property that convolution with a delta function is a shifting operation, we get: y(t)=u(t)∗h(t)=2u(t+2)−3u(t+1)+u(t−2).
By sketching this signal, we see that y(t) is a piecewise-constant function. It equals 2 for t∈[−2,−1), and −1 for t∈[−1,2), and is zero elsewhere.
The energy of the signal, Ey=∫−∞∞y2(t)dt, is the area under the curve of y2(t). This area can be calculated by summing the energies over the intervals: Ey=∫−2−1(2)2dt+∫−12(−1)2dt=(4×1)+(1×3)=7.
Q45GATE 2017MCQ2MAnalog Circuits
Assuming that transistors M1 and M2 are identical and have a threshold voltage of 1V, the state of transistors M1 and M2 are respectively.
Let's determine the operating region for each transistor. We'll start by assuming both M1 and M2 are in saturation. Since they are in series, their drain currents must be equal, ID1=ID2. Let Vx be the voltage at the drain of M1.
Using the saturation current equation ID=2kn(VGS−VTh)2, we can write: 2kn(VGS1−VTh)2=2kn(VGS2−VTh)2
Substituting the circuit values (VGS1=2V, VGS2=2.5V−Vx, VTh=1V): (2−1)2=(2.5−Vx−1)2⟹1=(1.5−Vx)2
Solving for Vx gives two possibilities: Vx=0.5V or Vx=2.5V. The value Vx=2.5V is invalid because it would make VGS2=0V, turning M2 off.
Now, let's check our saturation assumption with Vx=0.5V. For M1 to be in saturation, we need VDS1≥VGS1−VTh. Here, VDS1=Vx=0.5V, so the condition is 0.5V≥2V−1V, which is false. This contradiction means our initial assumption was wrong, and M1 must be in the linear region.
Since M1 is being pulled into the linear region by its low drain voltage, it allows a higher current than its saturation formula would suggest. This higher current requires M2 to have a larger VGS2 (and thus a smaller Vx), which keeps M2 in saturation. Therefore, M1 is in the linear region and M2 is in the saturation region.
Q46GATE 2017MCQ2MDigital Circuits
A programmable logic array (PLA) is shown in the figure. The Boolean function F implemented is
This circuit diagram shows a Programmable Logic Array (PLA), which implements logic functions in a standard two-level, sum-of-products form.
First, we analyze the AND plane to find the product terms. The asterisks indicate which input signals are connected to each AND gate.
The top AND gate connects to Pˉ, Qˉ, and R, producing the term PˉQˉR.
The middle AND gate connects to Pˉ, Q, and R, producing PˉQR.
The bottom AND gate connects to P, Qˉ, and R, producing PQˉR.
Finally, the OR plane sums these product terms. The output F is the logical OR of the three AND gate outputs, resulting in the expression F=PˉQˉR+PˉQR+PQˉR.
Q47GATE 2017NAT2MCommunication Systems
A modulating signal given By x(t)=5sin(4π103t−10πcos2π103t )V is fed to a phase modulator with phase deviation constant kp =0.5rad/V. If the carrier frequency is 20 kHz, the instantaneous frequency (in kHz) at t = 0.5 ms is __________
The instantaneous frequency, fi(t), of a phase-modulated signal is the sum of the carrier frequency fc and a deviation term proportional to the derivative of the modulating signal x(t). The governing equation is fi(t)=fc+2πkpdtdx(t).
First, we find the derivative of the modulating signal using the chain rule: dtdx(t)=5cos(4000πt−10πcos(2000πt))⋅(4000π+20000π2sin(2000πt))
Next, we evaluate this derivative at the specified time, t=0.5 ms=0.5×10−3 s. At this instant, the terms simplify: 2000πt=π and 4000πt=2π. Substituting these gives: dtdx=5cos(2π−10πcos(π))⋅(4000π+20000π2sin(π)) dtdx=5cos(2π+10π)⋅(4000π+0)=5cos(12π)⋅4000π=20000π V/s.
Now, calculate the frequency deviation: Δf=2πkpdtdx=2π0.5(20000π)=50,000 Hz=50 kHz.
Finally, add this deviation to the carrier frequency to find the instantaneous frequency: fi(0.5ms)=fc+Δf=20 kHz+50 kHz=70 kHz.
Q48GATE 2017NAT2MEngineering Mathematics
The minimum value of the function f(x)=31x(x2−3) in the interval −100≤x≤100 occurs at x=________.
To find the absolute minimum value of a continuous function on a closed interval, we must test the function's values at its critical points and at the endpoints of the interval.
First, we find the critical points by setting the derivative of f(x)=31x(x2−3)=31x3−x equal to zero. The derivative is f′(x)=x2−1. Setting f′(x)=0 gives x2=1, so our critical points are x=1 and x=−1, both of which are in the interval [−100,100].
Now, we evaluate the function at these critical points and at the endpoints, x=−100 and x=100.
At the left endpoint: f(−100)=31(−100)3−(−100)≈−333,233.3
At the critical point x=−1: f(−1)=31(−1)3−(−1)=2/3
At the critical point x=1: f(1)=31(1)3−1=−2/3
At the right endpoint: f(100)=31(100)3−100≈333,233.3
By comparing these four values, we see the smallest value is approximately −333,233.3, which occurs at the endpoint x=−100.
Q49GATE 2017NAT2MNetwork Theory
The switch in the circuit, shown in the figure, was open for a long time and is closed at t = 0. The current i(t) (in ampere) at t = 0.5 seconds is ________
For time t>0, after the switch is closed, we analyze the circuit in the Laplace domain. The expression for the current I(s) through the inductor branch can be established.
The s-domain current is given by the equation: I(s)=s10−5+2.5s12.5
By factoring 2.5 from the denominator of the second term, we can simplify this expression to: I(s)=s10−s+25
Taking the inverse Laplace transform yields the time-domain current, i(t): i(t)=(10−5e−2t)u(t) A
To find the current at t=0.5 seconds, we substitute this value into the equation: i(0.5)=10−5e−2(0.5)=10−5e−1=10−e5≈8.16 A
Q50GATE 2017NAT2MAnalog Circuits
In the voltage reference circuit shown in the figure, the op-amp is ideal and the transistors Q1,Q2...,Q32 are identical in all respects and have infinitely large values of common-emitter current the relation IC=ISexp(VBE/VT) , where Is is the saturation current. Assume that the voltage VP shown in the figure is 0.7 V and the thermal voltage VT =26mV. The output voltage Vout (in volts) is__________.
This circuit is a type of bandgap voltage reference. Let's break down the analysis into two parts.
First, we determine the voltage Vx at the op-amp's inputs. The ideal op-amp maintains equal voltages at its non-inverting (+) and inverting (-) terminals. The non-inverting input is connected to the base of Q1, so its voltage is VBE1=Vx. The base voltage for the other 31 transistors is given as VP=0.7 V. The difference in base-emitter voltages is related to the ratio of the currents, which are scaled by the number of transistors. This gives the core relationship: Vx−VP=VTln(31). With VP=0.7 V and VT=26 mV, we find Vx=0.7+(0.026)ln(31)≈0.789 V.
Second, we analyze the feedback network to find Vout. Applying KCL at the inverting input node (which is also at voltage Vx) gives 20 kΩVout−Vx=5 kΩVx−VP. Substituting VP=0.7 V and simplifying, we get the expression Vout=5Vx−2.8. Finally, we plug in our calculated value for Vx to find the output voltage: Vout=5(0.789)−2.8=1.145 V.
Q51GATE 2017NAT2MDigital Circuits
The state diagram of a finite state machine (FSM) designed to detect an overlapping sequence of three bits is shown in the figure. The FSM has an input 'In' and an output 'Out'. The initial state of the FSM is S0 . If the input sequence is 10101101001101, starting with the left-most bit, then the number times 'Out' will be 1 is __________.
By inspecting the state diagram, we see that the output Out is 1 only on the transition from state S2 with an input of 1. To reach state S2, the FSM must receive a '1' (to go from S0 to S1) followed by a '0' (to go from S1 to S2). Therefore, the FSM is designed to detect the sequence '101'.
The problem asks us to count the overlapping occurrences of '101' in the input stream 10101101001101. Let's identify them:
**101**01101001101
10**101**101001101
10101**101**001101
10101101001**101**
Each time this pattern is detected, the output becomes 1. Since there are four such instances, the output will be 1 a total of 4 times.
Q52GATE 2017MCQ2MElectromagnetics
Standard air-filled rectangular waveguides of dimensions a = 2.29 cm and b= 1.02 cm are designed for radar applications. It is desired that these waveguides operate only in the dominatnt TE10 mode but not higher than 95% of the next higher cutoff frequency. The range of the allowable operating frequency f is.
To determine the allowed operating frequency range, we must establish both a lower and an upper limit for single-mode operation.
The lower limit ensures the signal propagates efficiently in the dominant TE10 mode. The cutoff frequency for this mode is fc,10=2ac=2×2.29 cm3×1010 cm/s=6.55 GHz. The solution's logic sets the minimum operating frequency 25% above this cutoff, at 1.25×6.55 GHz≈8.19 GHz.
The upper limit prevents the excitation of higher-order modes. Since a>b (specifically, 2.29 cm>1.02 cm), the next mode to appear after TE10 is TE20. Its cutoff frequency is fc,20=ac=2.29 cm3×1010 cm/s=13.1 GHz. To ensure only the TE10 mode propagates, the operating frequency must stay below this, and the problem specifies a ceiling of 95% of this value: 0.95×13.1 GHz≈12.45 GHz.
Combining these limits gives the allowable frequency range: 8.19 GHz≤f≤12.45 GHz.
Q53GATE 2017NAT2MElectronic Devices
For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density ( JL ) is 2.5 mA/ cm2 and the open-circuit voltage ( Voc ) is 0.451 V. consider thermal voltage ( VT ) to be 25mV. If the intensity of the incident light is increased by 20 times,assuming that the temperature remains unchanged. Voc (in volts) will be ______.
The open-circuit voltage (VOC) of a solar cell is related to the photocurrent density (JL) by the equation VOC=VTln(JL/JS), where VT is the thermal voltage and JS is the reverse saturation current density.
To find the change in VOC when the light intensity changes, we can use the relationship VOC2−VOC1=VTln(JL2/JL1).
Since the photocurrent density is directly proportional to the incident light intensity, increasing the intensity by 20 times gives a ratio of JL2/JL1=20.
The resulting increase in voltage is ΔVOC=(25 mV)×ln(20)≈75 mV, or 0.075 V.
The new open-circuit voltage is the sum of the initial voltage and this increase: VOC2=VOC1+ΔVOC=0.451 V+0.075 V=0.526 V.
Q54GATE 2017NAT2MAnalog Circuits
In the circuit shown, transistors Q1 and Q2 are biased at a collector current of 2.6mA.Assuming that transistor current gains are sufficiently large to assume collector current equal to emitter current and thermal voltage of 26 mV, the magnitude of voltage gain V0/Vs in the mid-band frequency range is _____________ (up to second decimal place).
This circuit is a common-emitter amplifier (Q1) with emitter degeneration provided by transistor Q2. For mid-band AC analysis, the coupling capacitor effectively grounds the base of Q2, configuring it as a diode-connected transistor. This presents an effective emitter resistance to Q1 of RE=1/gm2.
Since both transistors have the same collector current, their transconductances are equal: gm=IC/VT=2.6 mA/26 mV=0.1 S.
The voltage gain for this degenerated CE amplifier is Av=1+gm1RE−gm1RL. Because gm1=gm2=gm, the degeneration resistance is RE=1/gm.
Substituting this into the gain formula gives Av=1+gm(1/gm)−gmRL=2−gmRL.
Plugging in the values, we find Av=2−(0.1 S)(1 kΩ)=2−100=−50. The magnitude is therefore 50.
Q55GATE 2017MCQ2MElectronic Devices
Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage ( VGS−VTH ) of T2 is double that of T1, where VGSandVTH are the gate-to-source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are ID1andgm1 respectively, the corresponding values of these two parameters for T2 are
For a MOSFET operating in the saturation region, the drain current ID and transconductance gm are defined by the following key relationships. The drain current is proportional to the channel width (W) and the square of the overdrive voltage (VOV=VGS−VTH), so ID∝W⋅VOV2. The transconductance is proportional to the width and the overdrive voltage itself, so gm∝W⋅VOV.
We are given that for transistor T2, the width is doubled (W2=2W1) and the overdrive voltage is also doubled (VOV2=2VOV1).
Using these relationships, we can find the new drain current ID2 by setting up a ratio: ID1ID2=(W1W2)(VOV1VOV2)2=(2)(2)2=8
This tells us that ID2=8ID1.
Similarly, we can find the new transconductance gm2 by calculating its ratio: gm1gm2=(W1W2)(VOV1VOV2)=(2)(2)=4
Therefore, the new transconductance is gm2=4gm1.